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  4. Impact of Alternative CDM Methods on HV ESD Protections Behavior
 
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2020
Conference Paper
Title

Impact of Alternative CDM Methods on HV ESD Protections Behavior

Abstract
Alternative CDM methods show a good correlation with Field Induced CDM on failing peak current for products not affected by recovery effects. Methods correlation using HV technologies impacted by Forward Recovery Effects, considering multiple DUT impedance variations and rise time impact, is investigated by means of characterizations and TCAD simulations.
Author(s)
Biccari, Leonardo di
STMicroelectronics, via C. Olivetti 2, Agrate Brianza, 20864, Italy
Boroni, Andrea
STMicroelectronics, via C. Olivetti 2, Agrate Brianza, 20864, Italy
Castelnovo, Alessandro
STMicroelectronics, via C. Olivetti 2, Agrate Brianza, 20864, Italy
Zullino, Lucia
STMicroelectronics, via C. Olivetti 2, Agrate Brianza, 20864, Italy
Cerati, Lorenzo
STMicroelectronics, via C. Olivetti 2, Agrate Brianza, 20864, Italy
Wolf, Heinrich  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Weber, Johannes  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Andreini, Antonio
STMicroelectronics, via C. Olivetti 2, Agrate Brianza, 20864, Italy
Mainwork
42nd Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2020. Proceedings  
Conference
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) 2020  
Language
English
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Keyword(s)
  • ESD

  • CDM

  • CC-TLP

  • Forward Recovery Effect

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