Charged Device Model (CDM) and Capacitive Coupled Transmission Line Pulsing (CC-TLP) Stress Severity Study on RF ICs

This paper studies the CDM stress severity on radiofrequency integrated circuits (RF ICs). The ICs are housed in various IC package sizes and tested with both CDM and CC-TLP test methods. Empirical correlation factors are established based on peak current and energy content driven failure mechanisms of RF pins.