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  4. LeTID- and (Extended) BO-Related Degradation and Regeneration in B- and Ga-Doped Monocrystalline Silicon during Dark and Illuminated Anneals
 
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2020
Conference Paper
Title

LeTID- and (Extended) BO-Related Degradation and Regeneration in B- and Ga-Doped Monocrystalline Silicon during Dark and Illuminated Anneals

Abstract
We study the degradation effects of boron-oxygen related light-induced degradation (LID) and light- and elevated temperature-induced degradation (LeTID) on both B- and Ga-doped Cz-Si wafers from the same industrial producer. The wafers of the two doping types were subjected to the same sample processing and degradation conditions. The studied conditions include dark anneal (DA) at 175°C and illuminated anneals at 75°C and either 1 or 0.1 sun eq. illumination intensity, which allow a good direct comparison of the influence of the dopant elements on the degradation effects. We find an atypical injection dependence of LeTID in the Ga-doped samples compared to the ""standard"" behavior in B-doped silicon. The Ga-doped samples degrade strongly only when the carrier injection is low. Degradation of Ga-doped samples during DA is only observed on long timescales, resulting in an injection-dependent lifetime dissimilar to LeTID-degraded Ga-doped samples and B-doped samples after both DA and LeTID. The results indicate that the dopants have a strong influence on the degradation behavior.
Author(s)
Kwapil, Wolfram  
Dalke, Jonas
Niewelt, Tim  
Schubert, Martin C.  
Mainwork
37th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2020  
Conference
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2020  
File(s)
Download (243.15 KB)
DOI
10.24406/publica-r-409504
10.4229/EUPVSEC20202020-2AO.5.3
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • Silicium-Photovoltaik

  • feedstock

  • Kristallisation

  • wafering

  • Charakterisierung von Prozess- und Silicium-Materialien

  • Dotierung und Diffusion

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