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  4. Assessment of Influencing Factors on Lifetime-Based Defect Analysis
 
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2020
Conference Paper
Title

Assessment of Influencing Factors on Lifetime-Based Defect Analysis

Abstract
Since most detection methods are not sensitive enough to detect and characterize recombination active defects in silicon lifetime spectroscopy is an important method in silicon photovoltaics. It is a powerful tool, that can determine the defect parameters Et and k via the analysis of defect parameter solution surfaces. But despite being a crucial method there is no convention for the assessment of uncertainties. This work lines out a possible way to characterize the uncertainty of the method by a simulation of statistical noise onto lifetime curves following the Shockley-Read-Hall-statistics. The uncertainty analysis is done for one exemplary set of defect parameters. It outlines how prone to wrongful parametrization this method can be, if not conducted with great care. Thereby the suggested approach can act as a tool to decrease the uncertainty of the method by understanding, which influences are most crucial to control.
Author(s)
Post, Regina
Niewelt, Tim  
Kwapil, Wolfram  
Schubert, Martin C.  
Mainwork
37th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2020  
Conference
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2020  
File(s)
Download (818.43 KB)
Download (687.23 KB)
DOI
10.24406/publica-r-409395
10.4229/EUPVSEC20202020-2CV.1.19
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • lifetime spectroscopy

  • Silicium-Photovoltaik

  • Charakterisierung von Prozess- und Silicium-Materialien

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