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  4. Temperature driven memristive switching in Al/TiO2/Al devices
 
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2020
  • Konferenzbeitrag

Titel

Temperature driven memristive switching in Al/TiO2/Al devices

Abstract
Aluminum/titanium dioxide/aluminum memristor structures were investigated via electrical and temperature-dependent measurements. At room temperature, devices show bipolar memristive switching under applied voltage bias with OFF-ON resistance ratios on the order of 10. Increasing the temperature up to 90 -140°C such a memristor, which has been prepared in the high-resistance state (HRS) before, undergoes a pronounced switching into its low resistance state (LRS). This temperature driven switching is reversible, i.e., it can be reset via application of an appropriate bias voltage sweep, typically up to ~1 V. We have further investigated this temperature effect as function of an additionally applied bias and discuss our findings within a proposed atomistic model involving the preferential motion of oxygen vacancies into pre-exposed TiO 2 regions.
Author(s)
Reiser, Daniel
Drost, Andreas
Chryssikos, Domenikos
Eisele, Ignaz
Tornow, Marc
Hauptwerk
IEEE 20th International Conference on Nanotechnology, IEEE-NANO 2020. Proceedings
Funder
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
Konferenz
International Conference on Nanotechnology (NANO) 2020
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DOI
10.1109/NANO47656.2020.9183631
Language
Englisch
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