• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. A 300 mV, low power VCO with the central Frequency of 4.89 GHz in 22 nm FDSOI
 
  • Details
  • Full
Options
2019
Conference Paper
Title

A 300 mV, low power VCO with the central Frequency of 4.89 GHz in 22 nm FDSOI

Abstract
A test circuit is presented which generates a frequency spectrum from 4.28 GHz to 5.5 GHz with the tuning percentage of 24.9%. The blocks presented in this paper consists of a Voltage controlled oscillator VCO, interfaced with differential divide by 2, a 2:1 Multiplexer and an output Buffer. All the sub-blocks are designed in 22-nm fully depleted Silicon-on-Insulator (SOI) CMOS technology. In this paper, the architectural design details, simulation and measurement results are presented. The VCO-core operates at the minimum supply voltage of 300 mV, with back-gate-bias voltage of 500 mV and consumes 0.48 mW power. The divided-signal exhibits phase noise performance of -114 dBc/Hz @ 1MHz offset when measured at the central frequency of 5.3 GHz FoMT of -192.7 dBc/Hz.
Author(s)
Kumar, P.
Böhme, E.
Al-Eryani, J.
Bora, P.P.
Borggreve, D.
Maurer, L.
Mainwork
IEEE Asia-Pacific Microwave Conference, APMC 2019. Proceedings  
Project(s)
REFERENCE  
OCEAN12  
Funder
European Commission EC  
European Commission EC  
Conference
Asia-Pacific Microwave Conference (APMC) 2019  
DOI
10.1109/APMC46564.2019.9038326
Language
English
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Keyword(s)
  • 5G

  • wideband

  • FDSOI

  • VCO

  • back-gate bias

  • IoT

  • low power

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024