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  4. A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation
 
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2020
Conference Paper
Titel

A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation

Abstract
The RF-power digital-to-analog converter (DAC)presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.
Author(s)
Weiß, Markus
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Friesicke, Christian
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Quay, Rüdiger orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Ambacher, Oliver
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hauptwerk
IEEE/MTT-S International Microwave Symposium, IMS 2020
Konferenz
International Microwave Symposium (IMS) 2020
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DOI
10.1109/IMS30576.2020.9224080
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
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  • arbitrary waveform ge...

  • digital-to-analog con...

  • transmitter architect...

  • 5G mobile communicati...

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