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2019
Conference Paper
Title
Design and fabrication of 3300V 100mO 4H-SiC MOSFET with Stepped p-body structure
Abstract
In this paper, a 3300 V 100 mO 4H-SiC planar MOSFET with stepped p-body structure was designed and fabricated. 2D TCAD tool was used to design the MOSFET cell and field limiting ring junction termination structure. The junction field-effect transistor (JFET) region was optimized to get better trade-off between on-resistance and maximum gate oxide electric field in off-state. The stepped p-body was formed by two step ion implantations to transfer the avalanche point from the edge of the p-body to the deep p+ area. Finally, the threshold voltage of 1.7 V, subthreshold swing of 188 mV/decade and the average interface state density of 5.35E11 cm -2 eV -1 were obtained from the measured transfer curve.
Author(s)
Ni, W.
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Wang, X.
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Feng, C.
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Xiao, H.
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Li, W.
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Wang, Q.
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China