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  4. Unravelling the Origins of Contact Recombination for Localized Laser-Doped Contacts
 
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2018
  • Konferenzbeitrag

Titel

Unravelling the Origins of Contact Recombination for Localized Laser-Doped Contacts

Abstract
Both localized laser-doping and contact opening are utilized in fabrication of high-efficiency solar cell devices. In this work, we present an experimental method to separate the origins of the lumped recombination parameter for localized contacts. We attribute the main source of recombination after laser doping to small edges around the laser-processed regions (j 0,e I 10,000 fA/cm 2 ), while the center areas have a non-negligible contribution (j 0,a ≈ 2,000-3,000 fA/cm 2 ). Both contributions can be significantly reduced by annealing. At the same time, the nonoptimized laser process achieves contact resistivity values as low as 70 mO cm 2 .
Author(s)
Ernst, M.
Huyeng, J.D.
Walter, D.
Fong, K.C.
Blakers, A.
Hauptwerk
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Konferenz
World Conference on Photovoltaic Energy Conversion (WCPEC) 2018
Photovoltaic Specialists Conference (PVSC) 2018
Photovoltaic Science and Engineering Conference (PVSEC) 2018
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2018
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DOI
10.1109/PVSC.2018.8547383
Language
Englisch
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