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  4. Implications of laser-doping parameters and contact opening size on contact resistivity
 
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2018
Conference Paper
Title

Implications of laser-doping parameters and contact opening size on contact resistivity

Abstract
Advanced silicon solar cells implement complex structures on both front and rear side. Laser processing has been shown to be a versatile and cost-effective technology for such applications. Local silicon doping or contact opening via ablation are two established process steps. In this work, we investigate their influence on the quality of local contacts with a focus on contact resistivity. We determine values for r C down to 70 mO cm 2 and 30 mO cm 2 for phosphorus and boron respectively, on a simple test structure with the help of three-dimensional numerical simulations.
Author(s)
Huyeng, Jonas  orcid-logo
Ernst, Marco
Fong, K.C.
Walter, Daniel
Blakers, A.
Mainwork
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018  
Conference
World Conference on Photovoltaic Energy Conversion (WCPEC) 2018  
Photovoltaic Specialists Conference (PVSC) 2018  
Photovoltaic Science and Engineering Conference (PVSEC) 2018  
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2018  
DOI
10.1109/PVSC.2018.8547209
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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