A TCAD Process Model with Monte Carlo Ion Implantation for 4H-SiC JBS Diode Analysis and Design

The electrical characteristics of Junction Barrier Schottky (JBS) diodes are primarily determined by the geometry and dimensions of the junction barrier which is formed by ion implantation. The final doping profile is affected by the implantation parameters and process conditions. Channeling, lateral straggling, as well as flank angle and resolution of the implantation mask have an influence on the profile shape. A TCAD process model was developed to reproduce the parameters and conditions of the ion implantation and to analyze the electrical characteristics of devices depending on the design of the junction barrier.