Highly scalable distributed high electron mobility transistor model

This paper reports a scalable small-signal modeling approach for III-V high electron mobility transistors. The model utilizes a distributed six port description of the three transistor electrodes which improves the model validity up to very long finger lengths. The planar transistor structure is modeled directly as given by its layout, which enables realistic modeling of coupling effects rather than using an abstract shell-description. A wide range of bias points is covered using third order Taylor expansions to calculate the bias dependent parameters. The modeling approach is verified at the example of an InGaAs metamorphic high electron mobility transistor technology with 50nm gate length.