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2019
Conference Paper
Titel
High-power-density AlGaN/GaN technology for 100-V operation at L-band frequencies
Abstract
In this paper we report on the development of a 0.50 µm AlGaN/GaN on SiC technology optimized for 100-V operation. Load pull measurements reveal a power density of more than 17 W/mm and a power-added efficiency of 77.3 % at a frequency of 1.0 GHz and a drain supply voltage of 100 V. Experimental data at 125 V even shows a power density in excess of 20 W/mm. To the authors' knowledge, the demonstrated PAE of 77.3 % is the highest ever reported in Lband for 100-V operation.