Single event sensitivity and de-rating of SiC power devices to heavy ions and protons
Poster presented at 30th European Conference on Radiation and its Effects on Components and Systems, RADECS 2019, Montpellier, France, September 16-20, 2019
We present single event tests performed on silicon carbide power devices (MOSFET, JFET, Schottky diodes). The data were taken across four campaigns with heavy ions up to Krypton at the Heavy Ion Facility, UCL, Louvain-la-Neuve, with Xenon ions at the G4 cave GANIL, Caen, with ultra-energetic Xenon at the H8 beamline at CERN and 45 MeV protons at the JULIC cyclotron, research centre Jülich. Throughout all tests the devices showed a high sensitivity to destructive single event induced failures even at low LETs or protons and significant derating.