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  4. Influence of Interfacial Oxides at the TCO/a-Si Contact on the Fill Factor of SHJ Solar Cells
 
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2019
Presentation
Title

Influence of Interfacial Oxides at the TCO/a-Si Contact on the Fill Factor of SHJ Solar Cells

Title Supplement
Presentation held at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, USA, 16.06.2019-21.06.2019
Author(s)
Meßmer, Christoph Alexander  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Bivour, Martin  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Luderer, Christoph
Fraunhofer-Institut für Solare Energiesysteme ISE  
Tutsch, Leonard  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Schön, Jonas  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Hermle, Martin  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Project(s)
DISC  
Funder
European Commission EC  
Conference
Photovoltaic Specialists Conference (PVSC) 2019  
DOI
10.24406/publica-fhg-405935
File(s)
N-565543.pdf (2.3 MB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Qualitätssicherung

  • Charakterisierung und Simulation

  • Photovoltaik

  • Silicium-Photovoltaik

  • Herstellung und Analyse von hocheffizienten Si-Solarzellen

  • silicon

  • heterojunction

  • simulation

  • tunneling

  • TCAD

  • Sentaurus TCAD

  • amorphous silicon

  • trap-assisted tunneling

  • selectivity

  • TOPCon

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