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  4. Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC
 
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2019
Poster
Title

Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC

Title Supplement
Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan
Author(s)
Hellinger, Carsten  
Rusch, Oleg  
Rommel, Mathias  orcid-logo
Bauer, A.J.
Erlbacher, Tobias  
Funder
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019  
DOI
10.24406/publica-fhg-405702
File(s)
N-565756.pdf (540.7 KB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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