2019
Poster
Title

Depth profiling of ion-implanted 4H-SiC using confocal Raman spectroscopy

Title Supplement
Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan
Author(s)
Song, Ying
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Xu, Zongwei
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Liu, Tao
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Rommel, Mathias  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Wang, Hong
State Key Laboratory of Separation Membranes and Membrane Processes, Tianjin Polytechnic University, China
Fang, Fengzhou
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Conference
File(s)
Rights
Use according to copyright law
DOI
Language
English
Keyword(s)