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  4. Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
 
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2019
Poster
Title

Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology

Title Supplement
Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan
Author(s)
Rusch, O.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Hellinger, C.  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Moult, J.
SMC Diode Solutions, Sangdest Microelectronics
Corcoran, Y.
SMC Diode Solutions, Sangdest Microelectronics
Erlbacher, T.  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019  
File(s)
Download (849.11 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-405652
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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