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  4. Establishing the "native oxide barrier layer for selective electroplated" metallization for bifacial silicon heterojunction solar cells
 
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2019
Conference Paper
Title

Establishing the "native oxide barrier layer for selective electroplated" metallization for bifacial silicon heterojunction solar cells

Abstract
The metallization of silicon heterojunction (SHJ) solar cells by selective Cu electroplating onto a structured PVD Cu-Al seed and mask layer stack is established by using the native oxide of the Al as insulating barrier. The NOBLE metallization (native oxide barrier layer for selective electroplating) allows reaching a first promising efficiency of 20.0% on full area SHJ solar cell with low contact resistivity on ITO. The approach features several advantages: low temperature processing, high metal conductivity of plated copper, no organic making and low material costs (almost Ag-free).
Author(s)
Hatt, Thibaud  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Bartsch, Jonas  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Kluska, Sven  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Glatthaar, Markus  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Mainwork
SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics  
Project(s)
DISC  
PV-BAT400
Funder
European Commission EC  
Bundesministerium für Wirtschaft und Energie BMWi (Deutschland)  
Conference
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) 2019  
DOI
10.24406/publica-r-405139
10.1063/1.5123832
File(s)
N-555765.pdf (1.47 MB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Plating

  • silicon hetero junction solar cell

  • TCOs

  • Photovoltaik

  • Silicium-Photovoltaik

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