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  4. Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature
 
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2019
Conference Paper
Title

Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature

Abstract
The fabrication and characterization of InAs/GaSb type-II superlattice long-wavelength infrared (LWIR) photodetectors for high operating temperature (HOT) are assessed regarding possible device yield. We investigate laterally-operated photoconductors with a detector cutoff wavelength in the LWIR at an operating temperature accessible with 3-stage thermoelectric cooling, realized by suitably tailoring the layer composition. Type-II superlattices with a layer composition of 14 monolayers InAs and 7 monolayers GaSb are grown on semi-insulating 3-inch GaAs substrates. We report on the growth of three different buffer layer variants that serve as growth templates for GaSb-based layers on GaAs substrates. The characterization of 75 nominally equal single element detectors per sample evidences the reliability of device processing. The electro-optical evaluation of a randomly chosen subset indicates a high uniformity of responsivity and noise of LWIR InAs/GaSb HOT photoconductors. At 210 K, the devices operate at a cutoff wavelength of 10.5 mm and achieve a mean peak spectral detectivity of 3.3 × 108 Jones.
Author(s)
Müller, Raphael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Niemasz, Jasmin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Daumer, Volker  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Janaszek, Andrzej
VIGO System, Poland
Jurenczyk, Jaroslaw
VIGO System, Poland
Rehm, Robert  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Optical Components and Materials XVI  
Conference
Conference "Optical Components and Materials" 2019  
DOI
10.1117/12.2506624
Additional full text version
Landing Page
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • HOT

  • TEC

  • InAs/GaSb

  • T2SL

  • photoconductor

  • immersion

  • Infrared detector

  • LWIR

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