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  4. Comparison of CDM and CC-TLP robustness for an ultra-high speed interface IC
 
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2018
Conference Paper
Title

Comparison of CDM and CC-TLP robustness for an ultra-high speed interface IC

Abstract
Challenging the limits of todays metrology and test setups for CDM and Capacitively Coupled Transmission Line Pulsing (CC-TLP), the study identifies critical stress parameters for a 25 Gbps communication device in the CDM-domain. Only CC-TLP stress in combination with a 33/63 GHz single shot oscilloscope was able to relate significant differences of failure current distributions to the rise time spread in the order of few tens of picoseconds and to obtain a conclusive sharp pass/fail transition at a certain peak current level.
Author(s)
Weber, Johannes  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Fung, Rita
Cisco Systems Inc
Wong, Richard
Cisco Systems Inc
Wolf, Heinrich  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Gieser, A. Horst
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Maurer, Linus  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Mainwork
40th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018. Proceedings  
Conference
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) 2018  
DOI
10.23919/EOS/ESD.2018.8509761
Language
English
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Keyword(s)
  • CC-TLP

  • CDM

  • Capacitively Coupled Transmission Line Pulsing

  • charged device model

  • ESD

  • electrostatic discharge

  • high speed device

  • rise time

  • slew rate

  • critical stress parameter

  • pogo pin capacitance

  • picosecond domain

  • peak current map

  • integrated circuit

  • testing

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