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  4. Defect functional structures of 4H-SiC and diamond induced by ion implantation: MD simulation and spectral characterization
 
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2018
Presentation
Title

Defect functional structures of 4H-SiC and diamond induced by ion implantation: MD simulation and spectral characterization

Title Supplement
Presentation held at COSIRES 2018, The 2018 Computer Simulation of Radiation Effects in Solids, June 18-22, Shanghai, China
Author(s)
Xu, Zongwei
State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University, China
Zhao, Junlei
Department of Physics and Helsinki Institute of Physics, University of Helsinki, Finland
Djurabekova, Flyura
Department of Physics and Helsinki Institute of Physics, University of Helsinki, Finland
Rommel, Mathias  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Nordlund, Kai
Department of Physics and Helsinki Institute of Physics, University of Helsinki, Finland
Conference
International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES) 2018  
File(s)
Download (8.8 MB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-401880
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • silicon carbide

  • diamond

  • defect

  • ion implantation

  • MD simulation

  • characterization

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