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  4. Dose dependent profile deviation of implanted aluminum in 4H-SiC during high temperature annealing
 
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2018
Poster
Title

Dose dependent profile deviation of implanted aluminum in 4H-SiC during high temperature annealing

Title Supplement
Poster presented at 22nd International Conference on Ion Implantation Technology, September 16th - 21st, 2018, Würzburg
Author(s)
Kocher, Matthias  
Rommel, Mathias  orcid-logo
Sledziewski, Tomasz
Häublein, Volker  
Bauer, Anton
Conference
International Conference on Ion Implantation Technology (IIT) 2018  
DOI
10.24406/publica-fhg-401780
File(s)
N-515131.pdf (592.69 KB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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