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  4. A low power, offset compensated, CMOS only bandgap reference in 22 nm FD-SOI technology
 
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2018
Konferenzbeitrag
Titel

A low power, offset compensated, CMOS only bandgap reference in 22 nm FD-SOI technology

Abstract
In this paper a very low supply voltage Bandgap Voltage Reference Circuit (BGR) has been presented. A temperature coefficient of 35 ppm/°C is achieved with the all-MOSFET based circuit that operates at a minimum supply voltage of 600 mV and consumes a total power of 9.5 mW. Chopping technique has been employed to eliminate the error at the output caused by the DC offset of the amplifier. The presented circuit has been designed in a 22 nm Fully Depleted Silicon on Insulator (FD-SOI) CMOS process.
Author(s)
Poongodan, Prajith Kumar
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT
Bora, Pragoti Pran
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT
Borggreve, David
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT
Vanselow, Frank
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT
Maurer, Linus
Universität der Bundeswehr
Hauptwerk
7th International Conference on Modern Circuits and Systems Technologies, MOCAST 2018
Project(s)
Things2Do
REFERENCE
Funder
European Commission EC
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
Konferenz
International Conference on Modern Circuits and Systems Technologies (MOCAST) 2018
Thumbnail Image
DOI
10.1109/MOCAST.2018.8376639
Language
Englisch
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Tags
  • bandgap voltage refer...

  • FD-SOI CMOS

  • ultra low voltage ban...

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