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  4. 6 kW bidirectional, insulated on-board charger with normally-off GaN gate injection transistors
 
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2017
Conference Paper
Title

6 kW bidirectional, insulated on-board charger with normally-off GaN gate injection transistors

Abstract
This paper describes a bidirectional insulated onboard charger (OBC) based on normally-off GaN gate injection transistors (GaN-GIT) and shows that, by using 600 V GaN GITs in a totem pole PFC together with a CLLC converter with variable turns-ratio, a complete bidirectional insulated 6 kW on-board charger, as shown in Fig. 1, can be realized in only 2 dm3. Besides the description of the topology, especially the modular buildup of the prototype will be shown, as well as measurements.
Author(s)
Endres, S.  
Sessler, C.
Zeltner, S.  orcid-logo
Eckardt, B.  
Morita, T.
Mainwork
PCIM Europe 2017, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings  
Conference
PCIM Europe 2017  
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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