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  4. Laser-transferred niv-seed for the metallization of silicon heterojunction solar cells by Cu-plating
 
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2017
Conference Paper
Titel

Laser-transferred niv-seed for the metallization of silicon heterojunction solar cells by Cu-plating

Abstract
We present results about a laser-based method for the metallization of silicon heterojunction solar cells by Cu-plating. The method consists of first depositing a dielectric layer as plating mask onto the transparent conductive oxide (TCO) and then depositing a NiV seed layer onto the plating mask by laser induced forward transfer (LIFT). Afterwards, the seed layer is fired through the plating mask in a second laser step in order to form a contact to the TCO. By dividing the process into laser transfer and firing (LTF) each step can be optimized separately. The final metallization is produced by Cu-plating. A pulse plating process is applied to further reduce parasitic plating. Different dielectric layers are tested as plating masks for their resistance against parasitic plating. The combination of a 15 nm thick Al2O3 layer as plating mask in conjunction with pulse plating is completely free of parasitic plating. Finally an efficiency of 22.2% is reached outperforming the screen printed reference cells by 0.5%abs.
Author(s)
Rodofili, A.
Wolke, W.
Kroely, L.
Bivour, M.
Cimiotti, G.
Bartsch, J.
Glatthaar, M.
Nekarda, J.
Hauptwerk
33rd European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2017
Konferenz
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2017
DOI
10.4229/EUPVSEC20172017-2CO.10.6
File(s)
N-484424.pdf (633.78 KB)
Language
English
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Fraunhofer-Institut für Solare Energiesysteme ISE
Tags
  • PV Produktionstechnologie und Qualitätssicherung

  • Photovoltaik

  • Silicium-Photovoltaik

  • Kontaktierung und Strukturierung

  • Herstellung und Analyse von hocheffizienten Solarzellen

  • laser-processing

  • heterojunction

  • metallization

  • plating

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