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  4. Filling of high aspect ratio (HAR) nanometer-scale silicon trenches by electrochemical deposition of nickel
 
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2017
Conference Paper
Title

Filling of high aspect ratio (HAR) nanometer-scale silicon trenches by electrochemical deposition of nickel

Abstract
This report presents an electrochemical deposition process (ECD) of nickel in submicrometer to nanometer silicon trenches with an aspect ratio greater than 25 over a grating area of several square millimeters. Due to the use of silicon substrates with a very low electrical resistivity in the range of 0.005 to 0.01 O·cm, a prior deposition of an electrically conductive seed layer was not necessary. To fabricate the samples for electrodeposition, silicon gratings of 200 nm periods were patterned with nanoimprint lithography and etched to around 2 - 4 microns by deep reactive ion etching (DRIE).
Author(s)
Hofmann, Christian
Kurth, F.
Wiemer, Maik  
Otto, Thomas  
Hiller, Karla  
Mainwork
Smart Systems Integration 2017  
Conference
International Conference and Exhibition on Integration Issues of Miniaturized Systems 2017  
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
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