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  4. Capacitance maximization of ultra-thin Si-capacitors by atomic layer deposition of anti-ferroelectric HfO2 in high aspect ratio structures
 
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2017
Presentation
Title

Capacitance maximization of ultra-thin Si-capacitors by atomic layer deposition of anti-ferroelectric HfO2 in high aspect ratio structures

Title Supplement
Presentation held at 17th International Conference on Atomic Layer Deposition, ALD 2017, 15th - 18th July 2017, Denver, Colorado, USA
Author(s)
Riedel, Stefan
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Weinreich, Wenke  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Mart, Clemens
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Müller, Johannes  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Conference
International Conference on Atomic Layer Deposition (ALD) 2017  
Request publication:
bibliothek@ipms.fraunhofer.de
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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