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2017
Poster
Title
Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC
Title Supplement
Poster presented at ICSCRM 2017, International Conference on Silicon Carbide and Related Materials, Washington, DC, September 17-22, 2017
Author(s)
File(s)
Rights
Use according to copyright law
Language
English