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  4. Influence of triangular defects on the electrical characteristics of 4H-SiC devices
 
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2017
Poster
Title

Influence of triangular defects on the electrical characteristics of 4H-SiC devices

Abstract
Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.
Author(s)
Schöck, Johannes
Schlichting, Holger  
Kallinger, Birgit  orcid-logo
Erlbacher, Tobias  
Rommel, Mathias  orcid-logo
Bauer, A.J.
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017  
File(s)
Download (1019.16 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-397855
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • defect

  • diode

  • VDMOS

  • photoluminescence

  • triangular defect

  • wafer inspection

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