Novel advanced analytical design tool for 4H-SiC VDMOSFET devices

An analytical tool to design 4H-SiC power vertical Double-diffused Metal-Oxide-Semiconductor Field-Effect-Transistor is proposed. The model optimizes, in terms of the doping concentration in the Drift-region, the trade-off between the ON-resistance, RON, and the maximum blocking voltage, VBL, that is the Drain-Source voltage for which the avalanche breakdown appears at the p+-well/n-DRIFT junction together with the breakdown of the Gate oxide. Finding such trade-off means to maximize, Figure-Of-Merit. Our results are based on a novel full-analytical model of the electric field in the Gate oxide, EOX, whose generality is ensured by the absence of fitting and empirical parameters. Model results are successfully compared with 2D-simulations covering a wide range of device performances.