CMOS compatible nanogap-field-effect-transistor for integrated NEMS application
Abstract
The concept of a new Nanogap-Field-Effect-Transistor (NanoFET) with suspended monocrystalline gate structures is discussed. It is a robust CMOS compatible NEMS (Nano-Electro-Mechanical-System) device, which can be used as sensor, actuator or electronic resonator. The manufacturing process and measurements of the mechanical as well as electrical behavior of NanoFET devices are presented.
