The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and to effectively suppress short-channel effects (SCEs). Furthermore, it is shown from our simulations that tri-gate AlGaN/GaN HEMTs can exhibit higher breakdown voltages and operate closer to the theoretical limit for GaN devices than their planar counterpart. Moreover, the RF performance of tri-gate HEMTs with optimized body design can be superior to that of conventional planar devices.
