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  4. Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurements
 
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2016
Poster
Title

Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurements

Title Supplement
Poster presented at 11th European Conference on Silicon Carbide & Related Materials, September 25th - 29th, 2016, Halkidiki, Greece
Author(s)
Kocher, Matthias  
Niebauer, Michael
Rommel, Mathias  orcid-logo
Haeublein, Volker  
Bauer, Anton
Conference
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016  
File(s)
Download (1.35 MB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-393433
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • 4H-SiC

  • doping profile

  • point contact current voltage

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