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Using SiC MOSFET's full potential - Swichting faster than 200 kV/µs
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2016
Conference Paper
Title
Using SiC MOSFET's full potential - Swichting faster than 200 kV/µs
Author(s)
Kreutzer, O.
Heckel, T.
März, M.
Mainwork
Silicon Carbide and Related Materials 2015
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2015
DOI
10.4028/www.scientific.net/MSF.858.880
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
