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2014
Poster
Title
New Defect Luminescence Scanner for Inline Control of Material Quality
Title Supplement
Poster presented at European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 21-25 September 2014
Abstract
For inline control of the material quality, a non-destructive, non-contact, non-preparational as well as fast and reliable characterization method is needed. Photoluminescence (PL) imaging at room-temperature fulfills all these basic requirements and extended defects can be identified based on their spectral and geometrical fingerprints. Therefore, a new defect luminescence scanner (DLS) has been developed operating at conditions, which allow for rapid full-wafer scanning up to 150 mm wafers (measurement time approx. 20 min). The identification of defects imaged by the DLS will be presented in the paper. Furthermore, a possible inline use of the DLS will be discussed.
Author(s)
File(s)
Rights
Under Copyright
Language
English