Rigorous simulation and optimization of the lithography/directed self-assembly co-process

We propose a framework for the rigorous simulation of the combined lithography/directed self-assembly (DSA) of block copolymers process. As an example, the rectification of a contact hole through grapho-epitaxy DSA is presented. The proposed modeling strategy, using a full-fledged lithography simulation and a coarse-grained polymer model in conjunction with a particle-based Monte-Carlo simulator, provides direct insight into various aspects of the pattern and defect formation. We accordingly characterize and quantify the combined process performance and its determining factors. Appropriate metrics and representations for the common process windows are derived.