2013
Conference Paper
Title

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Abstract
With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.
Author(s)
Müller, J.
Böscke, T.S.
Müller, S.
Yurchuk, E.
Polakowski, P.
Paul, J.
Martin, D.
Schenk, T.
Khullar, K.
Kersch, A.
Weinreich, W.
Riedel, S.
Seidel, K.
Kumar, A.
Arruda, T.M.
Kalinin, S.V.
Schlösser, T.
Boschke, R.
Bentum, R. van
Schröder, U.
Mikolajick, T.
Mainwork
Conference
DOI
Language
English