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  4. A monolithic integrated mHEMT chipset for high-resolution submillimeter-wave radar applications
 
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2013
Conference Paper
Title

A monolithic integrated mHEMT chipset for high-resolution submillimeter-wave radar applications

Abstract
In this paper, we present the development of a millimeter-wave monolithic integrated circuit (MMIC) chipset for use in a high-resolution radar system operating at 300 GHz. The chipset consists of a frequency multiplier by twelve, a medium power amplifier, a high power amplifier and a fully integrated 300 GHz heterodyne receiver MMIC. The frequency multiplier and the two amplifier circuits have been realized using a 100 nm InAlAs/InGaAs base depletion-type metamorphic high electron mobility transistor (mHEMT) technology and achieve a saturated output power of approximately 20 dBm between 90 and 105 GHz. The 300 GHz receiver S-MMIC was fabricated using a more advanced 35 nm mHEMT technology and demonstrates a conversion gain of more than 7 dB between 270 and 325 GHz. All circuits were successfully packaged into millimeter-wave waveguide modules and used to realize a compact 300 GHz radar demonstrator, which delivers an instantaneous bandwidth of 40 GHz together with an outstanding range resolution of 3.7 mm.
Author(s)
Tessmann, A.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, A.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Massler, H.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lewark, U.J.
Wagner, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weber, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kuri, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zink, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Riessle, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Stulz, H.P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, O.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Sommer, R.
Wahlen, A.
Stanko, S.
Mainwork
35th IEEE Compound Semiconductor Integrated Cicuit Symposium, CSIC 2013  
Conference
Compound Semiconductor Integrated Cicuit Symposium (CSIC) 2013  
DOI
10.1109/CSICS.2013.6659203
Language
English
Fraunhofer-Institut für Hochfrequenzphysik und Radartechnik FHR  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • frequency multiplier

  • H-band

  • heterodyne receiver

  • high power amplifier (HPA)

  • low-noise amplifier (LNA)

  • medium power amplifier (MPA)

  • metamorphic high electron mobility transistor (mHEMT)

  • submillimeter-wave monolithic integrated circuit (S-MMIC)

  • inverse synthetic aperture radar (ISAR)

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