On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs

To interpret Hall-effect measurements in a range of temperatures, the Hall factor for the electron transport in the channel of a SiC MOSFETs was evaluated. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. For the first time, the temperature dependence of the Hall factor in n-channel 4H-SiC MOSFETs was calculated. The results of the calculation reveal a strong reduction of the Hall factor with increasing temperature. Depending on gate voltage and temperature, the values of the Hall factor vary between 1.2 and 1.5. In addition, the sheet carrier densities and drift mobilities derived from the Hall-effect measurements using our new temperature-dependent Hall factor show very good agreement with i ndependent simulation results.