Evaluation of UV-SCIL resists for structure transfer using plasma etching

UV enhanced substrate conformal imprint lithography is an innovative full wafer scale soft lithography technique[1]. Possible fields of applications for UV-SCIL can require the transfer of the imprinted structure into various substrate materials. Therefore, the masking capabilities of UV-SCIL resists are of great interest for potential users. In this work, for two experimental fully organic resists etching rates and selectivities in plasma etching processes for silicon, silicon dioxide and aluminum are evaluated. Our results show that both resists are suitable for the transfer of nanostructures using plasma etching.