• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs
 
  • Details
  • Full
Options
2013
Conference Paper
Title

Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs

Abstract
To study mobility limiting mechanisms in (0001) 4H-SiC, lateral n-channel MOSFETs in p-implanted wells on n-type epitaxial layers were manufactured and additionally selectively shallow implanted with different nitrogen (N) doses in the channel region. The mobility was found to be limited by Columbic scattering at low electric fields. Further surface roughness scattering was considered as a possible mobility degradation mechanism at high electric fields. First investigations of the SiC surface by atomic force microscopy (AFM) in the channel region after implantation, annealing, and gate oxide removal revealed a rather rough topology. This could lead to fluctuations in the surface potential at the SiC/SiO2 interface, thus accounting in part for surface roughness scattering.
Author(s)
Strenger, C.
Uhnevionak, V.
Burenkov, A.  
Bauer, A.J.
Mortet, V.
Bedel-Pereira, E.
Cristiano, F.
Krieger, M.
Ryssel, H.
Mainwork
Silicon Carbide and Related Materials 2012  
Conference
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2012  
DOI
10.4028/www.scientific.net/MSF.740-742.537
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024