Self-Heating Effects in Nano-Scaled MOSFETs and Thermal-Aware Compact Models for the SOI CMOS Generation of 2015

The self-heating of MOSFETs scaled according to ITRS specifications for the years 2011 to 2019 is investigated using numerical TCAD simulations. The local warming-up due to self-heating in SOI based transistors can rise the tempera-ture in the active region of such transistors by more than 100 K and must be considered in IC design. To account for thermal effects at the stage of circuit design, thermal-aware BSIMSOI4 compact models were extracted for SOI-MOSFETs from the results of numerical TCAD simulations.