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2013
Conference Paper
Title

Modeling studies on alternative EUV mask concepts for higher NA

Abstract
This paper investigates the performance of different mask options for sub-13 nm EUV-lithography with a 4× demagnication and an NA of 0.45. The considered mask options include standard binary masks, standard attenuated phase-shift masks, etched attenuated phase-shift masks and embedded-shifter phase-shift masks. The lithographic performance of these masks is investigated and optimized in terms of mask efficiency, NILS, DoF, OPC-performance and telecentricity errors. A multiobjective optimization technique is used to identify the most promising mask geometry parameters.
Author(s)
Erdmann, A.  
Fühner, T.
Evanschitzky, P.  
Neumann, J.T.
Ruoff, J.
Gräupner, P.
Mainwork
Extreme Ultraviolet (EUV) Lithography IV  
Conference
Conference "Extreme Ultraviolet (EUV) Lithography" 2013  
DOI
10.1117/12.2011432
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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