• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. A review of PECVD aluminum oxide for surface passivation
 
  • Details
  • Full
Options
2012
Conference Paper
Title

A review of PECVD aluminum oxide for surface passivation

Abstract
During the last few years aluminum oxide became an inescapable passivation layer in the Si photovoltaic field. The keys of its success are its excellent interface with the Si surface and its powerful field effect, which lead to best passivation quality ever reported on p-type silicon surfaces. Plasma-enhanced chemical vapor deposition (PECVD) allows the fabrication of high-quality aluminum oxide layers that can be used for the passivation of p-type silicon surfaces of a wide range of doping levels. In this paper, the properties of PECVD Al2O3 layers are reviewed, including the passivation of highly and lowly doped p-type surfaces and the suitability of these processes to industrial solar cell production.
Author(s)
Saint-Cast, Pierre  
Hofmann, Marc  
Kühnhold-Pospischil, Saskia  
Kania, Daniel
Weiss, L.
Heo, Y.-H.
Billot, Etienne
Olwal, P.
Trogus, Daniel  
Rentsch, Jochen  
Preu, Ralf  
Mainwork
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM  
Conference
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2012  
DOI
10.24406/publica-r-378450
10.4229/27thEUPVSEC2012-2CV.5.60
File(s)
Download (223.54 KB)
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • PV Produktionstechnologie und Qualitätssicherung

  • Silicium-Photovoltaik

  • Produktionsanlagen und Prozessentwicklung

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024