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  4. Efficient simulation of EUV multilayer defects with rigorous data base approach
 
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2012
Conference Paper
Title

Efficient simulation of EUV multilayer defects with rigorous data base approach

Abstract
This paper presents the extension of the well-established rigorous electromagnetic field (EMF) solver Waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects using a rigorously computed multilayer defect data base combined with on demand computed absorber structures. Typical computation times are in the range of seconds up to a few minutes. The new simulation approach will be presented. Selected simulation examples and a defect repair example demonstrate the functionality and the capability to perform fast, highly accurate and flexible EUV multilayer defect computations.
Author(s)
Evanschitzky, Peter  
Shao, Feng
Erdmann, Andreas  
Mainwork
Photomask Technology 2012  
Conference
Conference "Photomask Technology" 2012  
International Symposium on Photomask Technology 2012  
Open Access
File(s)
Download (1.05 MB)
Rights
Use according to copyright law
DOI
10.1117/12.964282
10.24406/publica-r-377451
Additional link
Full text
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • Lithography simulation

  • EUV multilayer defects

  • rigorous EMF simulation

  • multilayer defect data base

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