2012
Poster
Title

Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation

Title Supplement
Poster at European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, September 2 - 6, 2012, Saint Petersburg
Author(s)
Mortet, V.
Bedel-Pereira, E.
Bobo, J.
Strenger, C.
Uhnevionak, V.
Burenkov, A.  
Cristiano, F.
Bauer, A.
Conference
File(s)
Rights
Use according to copyright law
DOI
Language
English
Keyword(s)