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  4. Reliability characterization of dielectrics in 200V trench capacitors
 
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2012
Poster
Title

Reliability characterization of dielectrics in 200V trench capacitors

Title Supplement
Poster at Workshop on Dielectrics in Microelectronics, WoDiM 2012, Dresden
Other Title
Zuverlässigkeitsuntersuchungen an Siliciumnitrid-Dielektrika in 200V Grabenkondensatoren
Abstract
Conventional reliability tests of silicon nitride dielectrics in 200V trench capacitors were carried out to predict lifetime. The applicability of constant voltage/current stress and ramped voltage/current stress tests was investigated. The methods which are typically used for planar thin dielectrics did not yield feasible predictions. In particular, charge-to-breakdown value does not appear to be a suitable measurement for the determination of the dielectric failure in trench capacitors. Lifetime extrapolation using ramped voltage stress tests can be performed. However, these results strongly depend on the delay time of the test due to charge trapping effects in the silicon nitride layer.
Author(s)
Erlbacher, Tobias  
Schwarzmann, Holger
Bauer, A.J.
Dorp, Joachim vom
Frey, Lothar
Conference
Workshop on Dielectrics in Microelectronics (WoDiM) 2012  
File(s)
Download (117.17 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-377152
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • capacitance

  • capacitor

  • silicon

  • dielectric reliability

  • monolithic integration

  • power module

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