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2012
Presentation
Title
Correlation-aware analysis of the impact of process variations on circuit behavior
Title Supplement
Presentation held at SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, September 5-7, 2012; Denver, Colorado
Other Title
Korrelationsbewusste Analyse des Einflusses von Prozessvariationen auf Verhalten von integrierten Schaltungen
Abstract
Performance variations of a 6-transistor SRAM cell were analyzed using coupled process, device, and circuit simulation. The propagation of process-induced variations to device and circuit performance was simulated. Variation sources from lithography, etching, and temperature profiles in rapid thermal annealing were considered and correlations between variations and performance parameters were studied.
