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  4. Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks
 
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2012
Poster
Title

Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks

Title Supplement
Poster at 17th Workshop on Dielectrics in Microelectronics, June 25-27, 2012, Dresden
Author(s)
Iglesias, V.
Erlbacher, T.  
Rommel, Mathias  orcid-logo
Murakami, K.
Bauer, A.J.
Frey, L.
Porti, M.
Martin-Martinez, J.
Rodriguez, R.
Nafria, M.
Aymerich, X.
Bersuker, G.
Conference
Workshop on Dielectrics in Microelectronics (WoDiM) 2012  
File(s)
Download (448.41 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-376453
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • conductive AFM

  • cAFM

  • high-k

  • dielectric breakdown

  • TDDB

  • grain

  • grain boundary

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