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Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks
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2012
Poster
Title
Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks
Title Supplement
Poster at 17th Workshop on Dielectrics in Microelectronics, June 25-27, 2012, Dresden
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Author(s)
Iglesias, V.
Erlbacher, T.
Rommel, Mathias
Murakami, K.
Bauer, A.J.
Frey, L.
Porti, M.
Martin-Martinez, J.
Rodriguez, R.
Nafria, M.
Aymerich, X.
Bersuker, G.
Conference
Workshop on Dielectrics in Microelectronics (WoDiM) 2012
DOI
10.24406/publica-fhg-376453
File(s)
001.pdf (448.41 KB)
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Rights
Under Copyright
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Keyword(s)
conductive AFM
cAFM
high-k
dielectric breakdown
TDDB
grain
grain boundary